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BS IEC 63068-1:2019
M00012391
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BS IEC 63068-1:2019
Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices – Part 1: Classification of defects
British Standards Institution
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Abstract
This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers.
General Product Information
| Document Type | Standard |
| Status | Current |
| Publisher | British Standards Institution |
| Committee | EPL/47 |