Table of Contents

1 -  AS ISO 14237-2006 Surface chemical analysis - Secondary-ion mass spectrometry - Determination of boron atomic concentration in silicon using uniformly doped materials
4 -  PREFACE
5 -  CONTENTS
6 -  INTRODUCTION
7 -  1 Scope
7 -  2 Normative reference
7 -  3 Principle
7 -  4 Reference materials
8 -  5 Apparatus
9 -  6 Specimen
9 -  7 Procedure
12 -  8 Expression of results
14 -  9 Test report
15 -  Annex A (informative) Determination of carrier density in silicon wafers
18 -  Annex B (informative) Boron isotope ratio measured by SIMS
21 -  Annex C (normative) Procedures for evaluation of apparatus performance
23 -  Annex D (normative) Procedures for the depth profiling of NIST SRM 2137
26 -  Annex E (informative) Statistical report on interlaboratory test programme

Abstract

Adopts ISO 14237:2000 to specify a secondary-ion mass spectrometric method for the determination of boron atomic concentration in single-crystalline silicon, using uniformly doped materials calibrated by a certified reference material implanted with boron.

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	Standards Australia
ProductNote	Pending Revision indicates that as a result of the Aged Standards review process, the document needs updating. If no project proposal, meeting the quality criteria, is received within the 12 month timeframe, the document shall be withdrawn.
Pages
ISBN
Committee	CH-016
Supersedes	DR 06403 CP