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ASTM F 996 : 2011
M00046349
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ASTM F 996 : 2011
TEST METHOD FOR SEPARATING AN IONIZING RADIATION-INDUCED MOSFET THRESHOLD VOLTAGE SHIFT INTO COMPONENTS DUE TO OXIDE TRAPPED HOLES AND INTERFACE STATES USING THE SUBTHRESHOLD CURRENT-VOLTAGE CHARACTERISTICS
American Society for Testing and Materials
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Abstract
CONTAINED IN VOL. 10.04, 2018 Defines the use of the subthreshold charge separation technique for analysis of ionizing radiation degradation of a gate dielectric in a metal-oxide-semiconductor-field-effect transistor (MOSFET) and an isolation dielectric in a parasitic MOSFET.
General Product Information
| Document Type | Standard |
| Status | Current |
| Publisher | American Society for Testing and Materials |
| ProductNote | Reconfirmed 2011 |
| Committee | F 01 |