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BS IEC 63068-2 : 2019
M00013111
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BS IEC 63068-2 : 2019
Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices. Test method for defects using optical inspection
British Standards Institution
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Abstract
This part of IEC 63068 provides definitions and guidance in use of optical inspection for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers
General Product Information
| Document Type | Standard |
| Status | Current |
| Publisher | British Standards Institution |
| Committee | EPL/47 |