Abstract

This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy.

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	British Standards Institution
ProductNote	THIS STANDARD ALSO REFERS :- GUM:1995
Pages
ISBN
Committee	CII/60
Supersedes	BS ISO 14701 : 2011