Table of Contents

FOREWORD<br>1 Scope <br>2 Normative references <br>3 Terms and definitions <br>4 Test method <br>5 Data to be reported<br>Annex A (informative) - Explanation for stress migration,<br>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;stress induced voiding - Temperature, geometry<br>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;dependence<br>Annex B (informative) - Example of geometry dependence<br>&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;for nose pattern<br>Bibliography

Abstract

Specifies a constant temperature (isothermal) aging method for testing copper (Cu) metallization test structures on microelectronics wafers for susceptibility to stress-induced voiding (SIV).

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	International Electrotechnical Committee
Pages
ISBN
Committee	TC 47