Table of Contents

FOREWORD<br>1 Scope <br>2 Normative references <br>3 Terms and definitions <br>4 Testing methods <br>Bibliography

Abstract

Defines the test methods to measure the residual stresses of films with thickness in the range of 0,01 [mu]m to 10 [mu]m in MEMS structures fabricated by wafer curvature or cantilever beam deflection methods.

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	International Electrotechnical Committee
Pages
ISBN
Committee	TC 47