Table of Contents

FOREWORD
INTRODUCTION
1 Scope and object
2 General
3 Normative references
4 Definitions, symbols and abbreviations
  4.1 Definitions
  4.2 Symbols and abbreviations
5 Physical characteristics
  5.1 Active area, A
  5.2 Window
6 Electrical characteristics
  6.1 General
  6.2 Capacitance
  6.3 Leakage current, Ir , and current - voltage
      characteristic, I(U)
      6.3.1 Measurement
      6.3.2 Temperature dependence
  6.4 Rise time
  6.5 Preamplifiers and amplifiers used with photodiode
      scintillation detectors
  6.6 Noise and resolution measurements
  6.7 Gain of avalanche photodiodes (G)
      6.7.1 General
      6.7.2 Measurement
      6.7.3 Temperature dependence of the gain
7 Optical characteristics
  7.1 General
  7.2 Quantum efficiency
  7.3 Responsivity (s)
  7.4 Spectral response
  7.5 Noise-equivalent power
8 General requirements - Data sheet

Abstract

Applicable to solid-state photodiodes (PD) and solid-state photodiode arrays (PDA) used in scintillation detectors or in Cherenkov detectors. Avalanche photodiodes (APD) are also covered by the test methods recommended in this standard, but they need some additional specific tests also described in this standard.

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	International Electrotechnical Committee
Pages
ISBN
Committee	TC 45