M00036586
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SEMICONDUCTOR DEVICES - DISCRETE DEVICES - PART 4: MICROWAVE DIODES AND TRANSISTORS
International Electrotechnical Committee
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Availability date: 11/06/2021
FOREWORD
1 Scope
2 Normative references
3 Variable capacitance, snap-off diodes and fast-switching
schottky diodes
4 Mixer diodes and detector diodes
5 Impatt diodes
6 Gunn diodes
7 Bipolar transistors
8 Field-effect transistors
9 Assessment and reliability - specific requirements
Provides requirements for the following categories of discrete devices: - variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification); - mixer diodes and detector diodes; - avalanche diodes (for direct harmonic generation, amplification); - gunn diodes (for direct harmonic generation); - bipolar transistors (for amplification, oscillation); - field-effect transistors (for amplification, oscillation).
Published | |
Document Type | Standard |
Status | Current |
Publisher | International Electrotechnical Committee |
Pages | |
ISBN | |
Committee | TC 47 |