Table of Contents

1. Overview
    1.1 Scope
    1.2 Purpose
    1.3 Abbreviation
2. References
3. Definitions, symbols, and abbreviations
    3.1 Definitions
    3.2 Symbols
    3.3 Abbreviations
4. Introduction
5. Detector characteristics
    5.1 Low-side tailing
    5.2 Charge collection
    5.3 Resolution and efficiency indicators
    5.4 High-side area (HSA)
    5.5 Peak-to-valley ratio
6. Specifications
    6.1 Geometry and packaging
    6.2 Detector capacitance
    6.3 Detector bias
    6.4 Leakage current
    6.5 Temperature operating range and temperature
         sensitivity
    6.6 Detector performance
    6.7 Test sources
    6.8 Source types
    6.9 Source documentation
    6.10 Timing properties
7. Spectrometer setup
    7.1 Instrument grouping
    7.2 Detector and preamplifier
    7.3 Shaping amplifier (main amplifier)
    7.4 Pulse generator (pulser)
    7.5 ADC and multichannel analyzer (MCA)
8. Zero settings and calibration
    8.1 Zero offset, pulse generator
    8.2 Zero offset, amplifier
    8.3 Zero offset, ADC
9. Measurements
    9.1 Detector leakage current
    9.2 Capacitance measurement
10. Measurement of energy resolution
    10.1 Noise line width
11. Efficiency measurements
    11.1 Gamma-ray counting efficiency for a full-energy peak
12. Peak-to-valley ratio
Annex A (informative) Bibliography
Annex B (informative) Electromagnetic interference
Annex C (informative) Full width at y maximum (FWyM)

Abstract

Applicable to wide-bandgap semiconductor radiation detectors, such as cadmium telluride (CdTe), cadmium-zinc-telluride (CdZnTe, referred to herein as CZT), and mercuric iodide (HgI[2]) used in the detection and measurement of ionizing radiation at room temperature; gamma rays, X-rays, and charged particles are covered.

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	Institute of Electrical & Electronics Engineers
Pages
ISBN