M00023055
New product
SURFACE CHEMICAL ANALYSIS - DETERMINATION OF SURFACE ELEMENTAL CONTAMINATION ON SILICON WAFERS BY TOTAL-REFLECTION X-RAY FLUORESCENCE (TXRF) SPECTROSCOPY
International Organization for Standardization
In stock
Warning: Last items in stock!
Availability date: 11/05/2021
Foreword
Introduction
1 Scope
2 Normative reference
3 Terms and definitions
4 Abbreviated terms
5 Principle
6 Apparatus
7 Environment for specimen preparation and measurement
8 Calibration reference materials
9 Safety
10 Measurement procedure
11 Expression of results
12 Precision
13 Test report
Annex A (informative) - Reference materials
Annex B (informative) - Relative sensitivity factor
Annex C (informative) - Preparation of reference materials
Annex D (informative) - VPD-TXRF method
Annex E (informative) - Glancing-angle settings
Annex F (informative) - International inter-laboratory test
results
Bibliography
Defines a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces.
Published | |
Document Type | Standard |
Status | Current |
Publisher | International Organization for Standardization |
Pages | |
ISBN | |
Committee | TC 201 |
Supersedes |
|