M00023121
New product
SURFACE CHEMICAL ANALYSIS - SECONDARY-ION MASS SPECTROMETRY - METHOD FOR DEPTH PROFILING OF BORON IN SILICON
International Organization for Standardization
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Availability date: 11/05/2021
Foreword
Introduction
1 Scope
2 Normative reference
3 Symbols and abbreviations
4 Principle
5 Reference materials
6 Apparatus
7 Specimen
8 Procedure
9 Expression of results
10 Test report
Annex A (informative) - Statistical report of stylus
profilometry measurements
Bibliography
Defines a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of boron in silicon, and using stylus profilometry or optical interferometry for depth scale calibration.
Published | |
Document Type | Standard |
Status | Current |
Publisher | International Organization for Standardization |
Pages | |
ISBN | |
Committee | TC 201 |
Supersedes |
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