Table of Contents

Foreword
Introduction
1 Scope
2 Symbols and abbreviations
3 Outline of method
4 Method for measuring the oxide thickness
Bibliography

Abstract

This International Standard specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy.

General Product Information

Published
Document Type	Standard
Status	Current
Publisher	International Organization for Standardization
Pages
ISBN
Committee	TC 201