M00028563
New product
SURFACE CHEMICAL ANALYSIS - SECONDARY-ION MASS SPECTROMETRY - METHOD FOR DEPTH PROFILING OF ARSENIC IN SILICON
International Organization for Standardization
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Availability date: 11/05/2021
Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Symbols and abbreviated terms
5 Principle
6 Reference materials
7 Apparatus
8 Specimen
9 Procedures
10 Expression of results
11 Test report
Annex A (informative) - Report of round robin test of depth
profiling of arsenic in silicon
Annex B (normative) - Procedures for the depth profiling of
NIST SRM 2134
Bibliography
Describes a secondary-ion mass spectrometric method using magnetic-sector or quadrupole mass spectrometers for depth profiling of arsenic in silicon, and using stylus profilometry or optical interferometry for depth calibration.
Published | |
Document Type | Standard |
Status | Current |
Publisher | International Organization for Standardization |
Pages | |
ISBN | |
Committee | TC 201 |
Supersedes |
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