M00029198
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SURFACE CHEMICAL ANALYSIS - SECONDARY-ION MASS SPECTROMETRY - METHOD FOR DEPTH CALIBRATION FOR SILICON USING MULTIPLE DELTA-LAYER REFERENCE MATERIALS
International Organization for Standardization
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Availability date: 11/05/2021
Foreword
Introduction
1 Scope
2 Normative references
3 Terms and definitions
4 Symbols and abbreviated terms
5 Requirements on multiple delta-layer reference materials
6 Measurement procedures
7 Calibration procedures
7.1 Principle of calibration
7.2 Determination of sputtering rate for reference material
7.3 Calibration of the depth scale for test specimens
7.4 Uncertainty in calibrated depth
8 Expression of results
8.1 Calibration under the same sputtering conditions as used
for the reference material
8.2 Calibration using a sputtering rate different from that
of the test specimen
8.3 Calibration with respect to concentration
9 Test report
Annex A (informative) Projected range of oxygen-ion in silicon
Annex B (informative) Estimations of peak shifts due to atomic
mixing
Annex C (informative) Estimations of peak shift due to peak
coalescence
Annex D (informative) Derivation of uncertainty
Bibliography
Describes a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
Published | |
Document Type | Standard |
Status | Current |
Publisher | International Organization for Standardization |
Pages | |
ISBN | |
Committee | TC 201 |
Supersedes |
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