M00065003
New product
Measuring of minority-carrier lifetime in silicon single crystal by photoconductive decay method
Japanese Standards Association
In stock
Warning: Last items in stock!
Availability date: 11/08/2021
This Japanese Industrial Standard specifies the measurement of minority-carrier bulk recombination lifetime (hereafter, referred to as bulk lifetime or b) in silicon single crystal by d.c. photoconductive decay method. The single crystal to be measured shall have a homogeneous composition, of which the rsistivity shall be at least 1 ohm.cm.
Published | |
Document Type | Standard |
Status | Current |
Publisher | Japanese Standards Association |
Pages | |
ISBN |